|
|
Other articles related with "hole injection"：
|
|
18509 |
Yidan Zhang(张一丹), Chunshuang Chu(楚春双), Sheng Hang(杭升), Yonghui Zhang(张勇辉),Quan Zheng(郑权), Qing Li(李青), Wengang Bi(毕文刚), and Zihui Zhang(张紫辉) |
| |
|
A polarization mismatched p-GaN/p-Al0.25Ga0.75N/p-GaN structure to improve the hole injection for GaN based micro-LED with secondary etched mesa |
| |
|
|
Chin. Phys. B
2023 Vol.32 (1): 18509-018509
[Abstract]
(275)
[HTML 0 KB]
[PDF 1210 KB]
(162)
|
|
|
98507 |
Jian Gao(高建), Qian-Qian Yu(于倩倩), Juan Zhang(张娟), Yang Liu(刘洋), Ruo-Fei Jia(贾若飞), Jun Han(韩俊), Xiao-Ming Wu(吴晓明), Yu-Lin Hua(华玉林), Shou-Gen Yin(印寿根) |
| |
|
Lowering the driving voltage and improving the luminance of blue fluorescent organic light-emitting devices by thermal annealing a hole injection layer of pentacene |
| |
|
|
Chin. Phys. B
2017 Vol.26 (9): 98507-098507
[Abstract]
(679)
[HTML 1 KB]
[PDF 1744 KB]
(199)
|
|
|
56806 |
Zhao Yu-Kun (赵宇坤), Li Yu-Feng (李虞锋), Huang Ya-Ping (黄亚平), Wang Hong (王宏), Su Xi-Lin (苏喜林), Ding Wen (丁文), Yun Feng (云峰) |
| |
|
Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection |
| |
|
|
Chin. Phys. B
2015 Vol.24 (5): 56806-056806
[Abstract]
(675)
[HTML 1 KB]
[PDF 1056 KB]
(432)
|
|
|
58502 |
Cai Jin-Xin (蔡金鑫), Sun Hui-Qing (孙慧卿), Zheng Huan (郑欢), Zhang Pan-Jun (张盼君), Guo Zhi-You (郭志友) |
| |
|
Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers |
| |
|
|
Chin. Phys. B
2014 Vol.23 (5): 58502-058502
[Abstract]
(543)
[HTML 1 KB]
[PDF 433 KB]
(480)
|
|
|
38504 |
Xing Ying-Jie (邢英杰), Qian Min-Fang (钱旻昉), Guo Deng-Zhu (郭等柱), Zhang Geng-Min (张耿民) |
| |
|
Increased work function in PEDOT：PSS film under ultraviolet irradiation |
| |
|
|
Chin. Phys. B
2014 Vol.23 (3): 38504-038504
[Abstract]
(660)
[HTML 1 KB]
[PDF 338 KB]
(1599)
|
|
|
28502 |
Yu Xiao-Peng (喻晓鹏), Fan Guang-Han (范广涵), Ding Bin-Bin (丁彬彬), Xiong Jian-Yong (熊建勇), Xiao Yao (肖瑶), Zhang Tao (张涛), Zheng Shu-Wen (郑树文) |
| |
|
Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer |
| |
|
|
Chin. Phys. B
2014 Vol.23 (2): 28502-028502
[Abstract]
(566)
[HTML 1 KB]
[PDF 947 KB]
(1330)
|
|
|
68506 |
Wu Le-Juan(仵乐娟), Li Shu-Ti(李述体), Liu Chao(刘超), Wang Hai-Long(王海龙), Lu Tai-Ping(卢太平), Zhang Kang(张康), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), and Yang Xiao-Dong(杨孝东) |
| |
|
Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers |
| |
|
|
Chin. Phys. B
2012 Vol.21 (6): 68506-068506
[Abstract]
(1315)
[HTML 1 KB]
[PDF 172 KB]
(1076)
|
|
|
2725 |
Cao Jun-Song(曹峻松), Guan Min(关敏), Cao Guo-Hua(曹国华), Zeng Yi-Ping(曾一平), Li Jin-Min(李晋闽), and Qin Da-Shan(秦大山) |
| |
|
The performance enhancement in organic light-emitting diode using a semicrystalline composite for hole injection |
| |
|
|
Chin. Phys. B
2008 Vol.17 (7): 2725-2729
[Abstract]
(1443)
[HTML 1 KB]
[PDF 725 KB]
(602)
|
|
|
3114 |
Chen Hai-Feng(陈海峰), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Gao Zhi-Yuan(高志远), and Gong Xin(龚欣) |
| |
|
Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress |
| |
|
|
Chin. Phys. B
2007 Vol.16 (10): 3114-3119
[Abstract]
(1196)
[HTML 0 KB]
[PDF 947 KB]
(551)
|
| First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|
